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Three Phase Rectifier Bridges Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 105/08 PSD 105/12 PSD 105/14 PSD 105/16 PSD 105/18 PSD 105 IdAVM VRRM = 160 A = 800-1800 V ~ ~ ~ Symbol IdAVM IFSM Test Conditions TC = 85C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 160 1500 1650 1350 1500 11250 11300 9120 9350 -40 ... + 150 150 -40 ... + 150 A A A A A A2 s A2 s A2 s A2 s C C C V V Nm Nm g i2 dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered, E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s (M5) (M5) 2500 3000 5 5 240 Mounting torque Terminal connection torque typ. Symbol IR VF VTO rT RthJC RthJK dS dA a Test Conditions VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM Characteristic Value 0.3 8.0 1.6 0.8 5 0.83 0.138 1.13 0.188 14 14 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2 IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSD 105 IF(OV) -----IFSM 200 A 10 IFSM (A) TVJ=45C TVJ=150C 1350 1500 5 2 As 160 120 80 40 IF T=25C T=150C 1.6 1.4 1.2 10 4 TVJ=45C TVJ=150C 1 0 VRRM 0.8 1/2 VRRM 0.6 1 VRRM 10 0.4 3 1 2 4 t [ms] 6 10 1.5 V Fig. 1 Forward current versus voltage drop per diode VF 0 1 10 0 10 1 t[ms] 10 2 10 3 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 0.11 0.06 0.16 = RTHCA [K/W] 85 90 95 100 80 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 500 [W] 400 PSD 105 160 [A] 120 300 0.26 105 110 115 DC sin.180 rec.120 rec.60 rec.30 80 200 DC sin.180 rec.120 rec.60 rec.30 25 IFAVM 75 125 [A] 0 0.46 120 125 130 40 IdAV 0 50 100 TC(C) 150 200 100 PVTOT 0 1.06 135 140 C Tamb 50 100 [K] 150 145 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature K/W 1.2 1 0.8 0.6 0.4 0.2 Z th Z thJK Z thJC 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions |
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